Autor: Hytch, MartinHawkes, Peter W.
Wydawca: Elsevier
Dostępność: 3-6 tygodni
Cena: 914,55 zł
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ISBN13: |
9780128209974 |
Autor: |
Hytch, MartinHawkes, Peter W. |
Oprawa: |
Hardback |
Rok Wydania: |
2020-03-19 |
Tematy: |
UYS |
Advances in Imaging and Electron Physics, Volume 213, merges two long-running serials, Advances in Electronics and Electron Physics and Advances in Optical and Electron Microscopy. The series features extended articles on the physics of electron devices (especially semiconductor devices), particle optics at high and low energies, microlithography, image science, digital image processing, electromagnetic wave propagation, electron microscopy and the computing methods used in all these domains.
Part 1: Quantum degeneracy 1. Partially coherent quantum degenerate electron matter waves Sam Keramati, Eric Jones, Jeremy Armstrong, Herman Batelaan
Part 2: The contribution of atom probe tomography to the correlation of the optical and structural properties of semiconductor nanostructures 2. Laser-assisted atom probe tomography Lorenzo Rigutti 3. Inaccuracies in atom probe measurements of semiconductor composition Lorenzo Rigutti 4. Atom probe-based correlative microscopy Lorenzo Rigutti 5. In-situ optical spectroscopy within an atom probe Lorenzo Rigutti
Part 3: CPO Proceedings Papers 6. Derivation, Cross-Validation, and Comparison of Analytic Formulas for Electrostatic Deflector Aberrations Eremey Valetov, Martin Berz 7. Analysis and Fringe Field Scaling of a Legacy Set of Electrostatic Deflector Aberration Formulas Eremey Valetov
Part 4: Advances in Optical Electron Microscopy 8. Scanning Optical Microscopy C. J. R. Sheppard
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