Advances in Imaging and Electron Physics

Advances in Imaging and Electron Physics, Volume 209, merges two long-running serials, Advances in Electronics and Electron Physics and Advances in Optical and Electron Microscopy. The series features extended articles on the physics of electron devices (especially semiconductor devices), particle optics at high and low energies, microlithography, image science, digital image processing, electromagnetic wave propagation, electron microscopy and the computing methods used in all these domains.

Contains contributions from leading authorities on the subject matterInforms and updates on the latest developments in the field of imaging and electron physicsProvides practitioners interested in microscopy, optics, image processing, mathematical morphology, electromagnetic fields, electrons and ion emission with a valuable resourceFeatures extended articles on the physics of electron devices (especially semiconductor devices), particle optics at high and low energies, microlithography, image science and digital image processing

1. Introduction to EELS Alberto Eljarrat Ascunce 2. Low-loss EELS methods Alberto Eljarrat Ascunce 3. DFT modeling of wurtzite III-nitride ternary alloys Alberto Eljarrat Ascunce 4. AlN/GaN and InAlN/GaN DBRs Alberto Eljarrat Ascunce 5. Multiple InGaN QW heterostructure Alberto Eljarrat Ascunce 6. Er-doped Si-nc/SiO2 multilayer Alberto Eljarrat Ascunce 7. Si-NCs embedded in dielectric matrices Alberto Eljarrat Ascunce 8. EELS Conclusions Alberto Eljarrat Ascunce 9. High-Tc Superconductors and Magnetic Electron Lenses Jan-Peter Adriaanse