Wide Bandgap Light Emitting Materials And Devices

Wide bandgap light emitters include laser diodes and lightemitting diodes (LED), the most modern diodes widely used in current technologies as microelectronics and optoelectronics. Rapid advances have been made during the last few years, with the result that more research is devoted to applications in line with the expanding market for optoelectronics.

This Volume deals with recent research results on wide bandgap light emitting materials, introducing new concepts for devices based on these materials. The editors, scientists with the best reputations, have invited authors from different institutions who are acknowledged researchers in the field as well as being involved in industrial applications. They represent several lines of research: III–nitride compounds, ZnO and ZnSe, the most promising materials for device applications.

III–Nitride Light–Emitting Diodes on Novel Substrates (X.A. Cao)
III–Nitride Micro–Cavity Light–Emitters (H.X. Jiang, J.Y. Lin)
Nitride emitters – recent process (T. Wang)
ZnSeTe rediscovered:from isoelectronic centers to quantum dots (Gu, Kuskovsky, Neumark)
Optical Properties of ZnO alloys (J. Muth, A. Osinsky)

Gertrude F. Neumark has been a full professor at the Columbia University Fu Foundation School of Engineering and Applied Science since 1985, and became the Howe Professor of Material Science and Engineering at the School in 1999; she is the first woman to hold a named chair in the School. She received her degrees in chemistry, a Ph.D. from Columbia University, an M.A. from Radcliffe College, and a B.A., Summa Cum Laude, from Barnard College. Professor Neumark′s primary research interests are in optical and electrical properties of wide–band gap semiconductors. She has authored or co–authored over 100 publications, including a cover story in Physics Today and several invited chapters including one in the 1995 McGraw–Hill Yearbook of Science and Technology. She also holds five U.S. patents as well as several foreign patents.

Igor L. Kuskovsky is assistant professor of Physics at Queens College of CUNY, New York. He graduated with high honours from the Physics Department of Odessa State University, Ukraine in 1991. He was awarded a Ph.D. in Applied Physics/Solid State from Columbia University in 1998. He published more than 40 scientific papers. His research interests include microstructural, electrical and electro–optical properties of wide band–gap semiconductors, optical and magneto–optical properties of wide band–gap quantum dots and nanowires as well as applications of low dimensional systems for bio–imaging.

Hongxing Jiang received his B.S. in Physics in 1981 from Fudan University, China and his Ph.D. in Physics in 1986 from Syracuse University. He is currently a University Distinguished Professor of Physics at Kansas State University. He has published 250 technical papers in the area of compound semiconductors, holds more than 10 patents (approved and pending), edited three books, and delivered over 60 invited presentations.