Photonics and Electronics with Germanium

Representing a further step towards enabling the convergence of computing and communication, this handbook and reference treats germanium electronics and optics on an equal footing. Renowned experts paint the big picture, combining both introductory material and the latest results. 
The first part of the book introduces readers to the fundamental properties of germanium, such as band offsets, impurities, defects and surface structures, which determine the performance of germanium–based devices in conjunction with conventional silicon technology. The second part covers methods of preparing and processing germanium structures, including chemical and physical vapor deposition, condensation approaches and chemical etching. The third and largest part gives a broad overview of the applications of integrated germanium technology: waveguides, photodetectors, modulators, ring resonators, transistors and, prominently, light–emitting devices. 
An invaluable one–stop resource for both researchers and developers. 

Preface 

DEFECTS IN GERMANIUM 
Introduction 
Methods for Studying Defects and Impurities 
Impurities 
Intrinsic Defects 
Summary 

HYDROGEN IN GE 
Introduction 
Properties of Hydrogen in Ge 
Hydrogen Passivation of Shallow Donors and Acceptors in Ge 
Summary 

EPITAXY OF Ge LAYERS ON BLANKET AND PATTERNED Si(001) FOR NANOELECTRNICS AND OPTOELECTRONICS 
General Introduction 
Epitaxial Growth of GeThick Layers on Si(001) 
Ge Surface Passivation with Si 
SEG of Ge in Cavities at the End of OpticalWaveguides 
Fabrication, Structural, and Electrical Properties of Compressively Strained Ge–on–Insulator Substrates 
Conclusion and Perspectives 

HEAVY DOPING IN Si1–xGex EPITAXIAL GROWTH BY CHEMICAL VAPOR DEPOSITION 
Introduction 
In situ Doping of B, P, and C in Si1–x Gex Epitaxial Growth 
Atomic–Layer Doping in Si1–xGex Epitaxial Growth 
Conclusion and Future Trends 

FEOL INTEGRATION OF SILICON– AND GERMANIUM–BASED PHOTONICS IN BULK–SILICON, HIGH–PERFORMANCE SiGe: C–BiCMOS PROCESSES 
Introduction 
Local SOI Technology 
Passive SiliconWaveguide Technology 
Modulator Technology 
Photonics Integration in BiCMOS Flow 
Germanium Photo Detector – Process Integration Challenges 
Example Circuit – 10 Gbit s–1 Modulator with Driver 
Outlook 

Ge CONDENSATION AND ITS DEVICE APPLICATION 
Principle of Ge Condensation and Fabrication Process 
GOI Film Characterization 
Device Application 
Summary 

WAVEGUIDE DESIGN, FABRICATION, AND ACTIVE DEVICE INTEGRATION 
Introduction 
Design of Silicon PhotonicWireWaveguiding System 
Fabrication 
Propagation Performance ofWaveguides 
Integration of Si/Silica and Ge Photonic Devices 
Summary 

DETECTORS 
Introduction 
Historical Background 
Fiber–Optics Revolution 
Avalanche Devices 
Si–Photonics 
High–Performance Ge Detectors 
Process Options and Challenges 
Device Architectures 
Ge on Si Detectors in Highly Integrated Systems 
Reliability 
Conclusions 

Ge AND GeSi ELECTROABSORPTION MODULATORS 
Introduction 
EAE in Ge and GeSi:Theoretical and Experimental 
Waveguide Coupling 
Current Progress in Ge and GeSi EAMs 
Conclusions 

STRAINED Ge FOR Si–BASED INTEGRATED PHOTONICS 
Introduction 
Bandgap and Strain: Theory 
Bandgap and Strain: Experiment 
Strain–Engineered Tunability of Lasers 
Conclusions 

Ge QUANTUM DOTS–BASED LIGHT EMITTING DEVICES 
Introduction 
Formation of Ge Dots on Si Substrates andTheir Luminescent Properties 
Enhanced Light Emission from Ge QDs Embedded in Optical Cavities 
Optically Excited Light Emission from Ge QDs 
Electrically Excited Light Emission from Ge ODs 
Conclusion 

Ge–ON–Si LASERS 
Introduction 
Modeling and Analyses of Band–Engineered Ge Optical Gain Media 
Fabrication of Band–Engineered Ge–on–Si 
Band–Engineered Ge–on–Si Light Emitters 
Conclusions 

Index