Crystal Growth Technology: Semiconductors and Dielectrics

An international team of experts presents the current methods and the latest applications in producing semiconductors and dielectrics by bulk crystal growth technology.

Spis treści:
GENERAL ASPECTS OF CRYSTAL GROWTH TECHNOLOGY
Thermodynamic modeling of crystal growth processes
Prediction of s–l interface shapes and oxygen concentration distributions for 300 mm silicon crystals in a magnetic field
Modeling of vapor–phase growth of SiC and AlN bulk crystals
Advanced technologies of crystal growth from melt using vibrational influence
Convection during bulk crystal growth: The good, the bad, and the ugly
COMPOUND SEMICONDUCTORS
Defect characterization and control in VCz GaAs crystals grown without B2O3 encapsulant
The growth of semiconductor crystals (Ge, GaAs) by the heater–magnet technology
Sublimation growth of bulk AlN crystals
Behaviour of dislocations during Liquid Phase Epitaxy of GaN and CVD epitaxy of SiC
Low temperature growth of ternary III–V semiconductor crystals from quaternary melts
CdHgTe growth technology using ACRT and LPE
Influence of a Pt cold finger in the thermal environments during the growth of CdZnTe by the vertical Bridgman method
HALIDES AND OXIDES
Growth, computer modeling, and optimization of sapphire, garnet, and oxide crystals
Advanced material development for inertial fusion energy
Ceramic lasers and ceramic–crystal lasers
LPE of magnetooptical garnet films: preparation, characterization, applications
Growth technology and laser properties of Yb–doped sesquioxides
Continuous growth of large alkali halides: physics and technology
Trends in scintillation crystals
CRYSTAL GROWTH FOR SUSTAINING ENERGY
Silicon crystal growth for photovoltaics
Low cost semiconductor and solar silicon
CRYSTAL MACHINING
New developments in multi–wire sawing
Crystal machining using atmospheric pressure plasma


Nota biograficzna:
Dr. Peter Capper is a Materials Team Leader at SELEX Sensors and Airborne Systems Infrared Ltd (formerly BAE Systems), and has over 30 years of experience in the infrared material Cadmium Mercury Telluride (CMT). He holds the patent for the application of the accelerated crucible rotation technique to CMT growth and is recognised as a world authority on CMT. He has written and edited 6 books on electronic materials and devices. He has served on several International Advisory boards to conferences, acted as co–Chair at an E–MRS Symposium and a SPIE Symposium and has edited several conference proceedings for J. Crystal Growth and J. Materials Science. He is also currently on the editorial board of the Journal of Materials Science: Materials in Electronics.
Peter Rudolph is currently the coordinator of the technology department of the Leibniz–Institute for Crystal Growth in Berlin. His present research field is the growth of semiconductor crystals (GaAs, Ge, Si) in magnetic fields. He obtained the PhD in Solid State Physics at the Technical University of Lvov in 1972, and in 1985 the Professor position at the Humboldt University in Berlin. From 1993–94 he was Guest Professor at the Tohoku University in Sendai. He is associate editor of J. Crystal Growth, president of the German Society of Crystal Growth and member of the IOCG executive committee. He is the author of one monography, more than 200 papers and book chapters, 5 books editions and 30 patent descriptions. He acted as co–chair and advisor of several international conferences and schools. He received innovation prizes in 2001 and 2008.