Molecular Beam Epitaxy: Applications to Key Materials

In this volume, the editor and contributors describe the use of molecular beam epitaxy (MBE) for a range of key materials systems that are of interest for both technological and fundamental reasons. Prior books on MBE have provided an introduction to the basic concepts and techniques of MBE and emphasize growth and characterization of GaAs-based structures. The aim in this book is somewhat different; it is to demonstrate the versatility of the technique by showing how it can be utilized to prepare and explore a range of distinct and diverse materials. For each of these materials systems MBE has played a key role both in their development and application to devices.

The Technology and Design of Molecular Beam Epitaxy Systems
Molecular Beam Epitaxy of High-Quality GaAs and AlGaAs
Gas-Source Molecular Beam Epitaxy: GaxIn1-xAs1-yPy/InP MBE with Non-elemental Sources. Heterostructures and Device Properties
Molecular Beam Epitaxy of Wide Gap II-VI Semiconductor Heterostructures
Elemental Semiconductor HeterostructuresùGrowth, Properties, and Applications
MBE Growth of High Tc Superconductors
MBE Growth of Artificially-Layered Magnetic Metal Structures
Reflection High Energy Electron Diffraction Studies of the Dynamics of Molecular Beam Epitaxy
Acknowledgments
Appendix: Two-Level Diffraction
References
Index