Autor: David L. Pulfrey
Wydawca: Cambridge University Press
Dostępność: 3-6 tygodni
Cena: 449,40 zł
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ISBN13: |
9780521514606 |
ISBN10: |
0521514606 |
Autor: |
David L. Pulfrey |
Oprawa: |
Hardback |
Rok Wydania: |
2010-01-28 |
Ilość stron: |
354 |
Wymiary: |
247 x 174 mm |
Tematy: |
Electronics & communications engineering |
Written in a concise, easy-to-read style, this text for senior undergraduate and graduate courses covers all key topics thoroughly.
It is also a useful self-study guide for practising engineers who need a complete, up-to-date review of the subject.
Key features: • Rigorous theoretical treatment combined with practical detail • A theoretical framework built up systematically from the Schrödinger Wave Equation and the Boltzmann Transport Equation • Covers MOSFETS, HBTs and HJFETS • Uses the PSP model for MOSFETS • Rigorous treatment of device capacitance • Describes the operation of modern, high-performance transistors and diodes • Evaluates the suitability of various transistor types and diodes for specific modern applications • Covers solar cells and LEDs and their potential impact on energy generation and reduction • Includes a chapter on nanotransistors to prepare students and professionals for the future • Provides results of detailed numerical simulations to compare with analytical solutions • End-of-chapter exercises • Online lecture slides for undergraduate and graduate courses
Spis treści:
Preface
1. Introduction
2. Energy band basics
3. Electron and hole concentrations
4. Thermal equilibrium
5. Charge transport
6. np-and Np-junction basics
7. Solar cells
8. Light-emitting diodes
9. HBT basics
10. MOSFET basics
11. HJFET basics
12. Transistor capacitances
13. Transistors for high-speed logic
14. Transistors for high frequencies
15. Transistors for memories
16. Transistors for high power
17. Transistors for low noise
18. Transistors for the future
Appendix A. Physical constants
Appendix B. Selected material properties
Appendix C. N-MOSFET parameters
Index.
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