Secondary Ion Mass Spectrometry SIMS XI

This volume contains 252 contributions presented as plenary, invited and contributed poster and oral presentations at the 11th International Conference on Secondary Ion Mass Spectrometry (SIMS XI) held at the Hilton Hotel, Walt Disney World Village, Orlando, Florida, 7 12 September, 1997. The book covers a diverse range of research, reflecting the rapid growth in advanced semiconductor characterization, ultra shallow depth profiling, TOF–SIMS and the new areas in which SIMS techniques are being used, for example in biological sciences and organic surface characterization. Papers are presented under the following categories:Isotopic SIMSBiological SIMSSemiconductor Characterization Techniques and ApplicationsUltra Shallow Depth ProfilingDepth Profiling Fundamental/Modelling and DiffusionSputter–Induced TopographyFundamentals of Molecular DesorptionOrganic MaterialsPractical TOF–SIMSPolyatomic Primary IonsMaterials/Surface AnalysisPostionizationInstrumentationGeological SIMSImagingFundamentals of SputteringIon Formation and Cluster FormationQuantitative Analysis Environmental/Particle CharacterizationRelated TechniquesThese proceedings provide an invaluable source of reference for both newcomers to the field and experienced SIMS users.

Spis treści:
Partial table of contents:
PLENARY LECTURES.
Sputtering Artifacts in SIMS Depth Profiles (invited) (P. Williams).
ISOTOPIC SIMS.
SIMS Studies of Corrosion in Nuclear Reactor Components (invited) (S. Bushby & G. Bickel).
BIOLOGICAL SIMS.
Mapping Phosphocholine Secondary Ion Emission from the Brain (P. Todd, et al.).
SEMICONDUCTOR CHARACTERIZATION –
TECHNIQUES.
The State of the Art of Two Dimensional Dopant Profiling (invited) (M. Dowsett).
SEMICONDUCTOR CHARACTERIZATION –
APPLICATIONS.
Characterization of GaN and Related Compounds by SIMS Analysis ( Y. Gao, et al.).
ULTRA SHALLOW DEPTH PROFILING.
SIMS Depth Profiling of Ultra Shallow Implants and Junctions in Silicon –
Present Performance and Future Potential (invited) (M. Dowsett).
DEPTH PROFILING–FUNDAMENTAL/MODELING.
Ion Beam Induced Nitridation and Oxidation of Silicon (M. Petravc, et al.).
DEPTH PROFILING –
DIFFUSION.
Diffusion of Silicon in Ion Implanted GaAs (J. Likonen, et al.).
SPUTTER–INDUCED TOPOGRAPHY.
Surface Topography on InP Produced by Ion Bombardment (Y. Homma, et al.).
FUNDAMENTALS OF MOLECULAR DESORPTION.
Mechanistic Study of Particle Bombardment of an Alkanethiolate/Au System (K. Liu, et al.).
ORGANIC MATERIALS.
Depth Profiling Studies of Interfacial Phenomena in Polymer Thin Films (Y. Strzhemechny, et al.).
PRACTICAL TOF SIMS.
Applications of Time–of–Flight SIMS in the Chemical Industry (invited) (K. Lloyd, et al.).
POLYATOMIC PRIMARY IONS.
Chemical Effects in Ion Formation Induced by Polyatomic Ion Impacts on Inorganic Targets (R. English, et al.).
MATERIALS/SURFACE ANALYSIS.
The Use of Static and Dynamic SIMS in the Analysis of Ceramic and Amorphous Materials (E. Leone).
POSTIONIZATION.
Fundamental Investigations with Imaging Laser–SNMS (A. Schnieders, et al.).
INSTRUMENTATION.
A New Time–of–Flight Secondary Ion Mass Spectrometer with Integral Ion Gun (C. Lawrence, et al.).
GEOLOGICAL SIMS.
Rare Earth Elements Sensitivity Factors in Calcic Plagioclase (Anorthite) (C. Floss & B. Jolliff).
IMAGING.
Dynamic SIMS Imaging Using Sector Field Instruments (invited) (P. van der Heide).
FUNDAMENTALS OF SPUTTERING AND ION FORMATION.
Secondary Ion Emission from keV Cluster Impacts (invited) (M. Van Stipdonk, et al.).
FUNDAMENTALS OF SPUTTERING–CLUSTER FORMATION.
Formation of Sputtered Semiconductor Clusters (R. Heinrich & A. Wucher).
QUANTITATIVE ANALYSIS.
Multiple Element Ion Impla nts for Metal Contamination Analysis in Semiconductor Technology (F. Stevie, et al.).
ENVIRONMENTAL/PARTICLE CHARACTERIZATION.
Disappearance Cross Sections of Ammonium Adsorbates on Environmental Surfaces (G. Groenewold, et al.).
RELATED TECHNIQUES.
Surface Analysis of all Elements with Isotopic Resolution at High Ambient Pressures Using Ion Spectroscopic Techniques (V. Smentkowski, et al.).
Indexes.

Okładka tylna:
This volume contains 252 contributions presented as plenary, invited and contributed poster and oral presentations at the 11th International Conference on Secondary Ion Mass Spectrometry (SIMS XI) held at the Hilton Hotel, Walt Disney World Village, Orlando, Florida, 7 12 September, 1997. The book covers a diverse range of research, reflecting the rapid growth in advanced semiconductor characterization, ultra shallow depth profiling, TOF–SIMS and the new areas in which SIMS techniques are being used, for example in biological sciences and organic surface characterization. Papers are presented under the following categories:Isotopic SIMSBiological SIMSSemiconductor Characterization Techniques and ApplicationsUltra Shallow Depth ProfilingDepth Profiling Fundamental/Modelling and DiffusionSputter–Induced TopographyFundamentals of Molecular DesorptionOrganic MaterialsPractical TOF–SIMSPolyatomic Primary IonsMaterials/Surface AnalysisPostionizationInstrumentationGeological SIMSImagingFundamentals of SputteringIon Formation and Cluster FormationQuantitative Analysis Environmental/Particle CharacterizationRelated TechniquesThese proceedings provide an invaluable source of reference for both newcomers to the field and experienced SIMS users.