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Structure and Imperfections in Amorphous and Crystalline Silicon Dioxide - ISBN 9780471975366

Structure and Imperfections in Amorphous and Crystalline Silicon Dioxide

ISBN 9780471975366

Autor: R. A. B. Devine, J.–P. Duraud, E. Dooryhée

Wydawca: Wiley

Dostępność: 3-6 tygodni

Cena: 1 970,85 zł

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ISBN13:      

9780471975366

ISBN10:      

0471975362

Autor:      

R. A. B. Devine, J.–P. Duraud, E. Dooryhée

Oprawa:      

Hardback

Rok Wydania:      

2000-03-28

Ilość stron:      

528

Wymiary:      

241x166

Tematy:      

TG

Structure and Imperfections in Amorphous and Crystalline Silicon Dioxide Edited by R. A. B. Devine, University of New Mexico, USA J.–P. Duraud, ESRF, Grenoble, France and E. Dooryhée, ESRF, Grenoble, France Silicon dioxide is one of the most common naturally occurring materials. Its applications range from nuclear waste storage to optical fibre communications to silicon microelectronics. Experts from America, Europe and Japan have written chapters covering both the amorphous and the crystalline phases of the material with particular reference to its structure and defects. The book is divided into four sections: Topological Models for the Crystalline and Amorphous Phases Electronic Structure Macroscopic and Point Defects Processing and Applications of Crystalline and Amorphous Phases Engineers, researchers and postgraduate students of materials science, physics and engineering will all find this an extremely useful addition to their libraries.

Spis treści:
Contributors
Preface
Part I Topological Models for the Crystalline and Amorphous Phases
(a) Description of the Atomic Arrangement in SiO—2 Polymorphs
Chapter 1 The Topology of Silica Networks (by L. W. Hobbs, C. E. Jesurum and B. Berger)
Chapter 2 Low–Pressure Crystalline Phases of SiO—2 (by G. Dolino)
Chapter 3 Theoretical Investigations of the Structure of Amorphous SiO—2 at Elevated Pressure (by L. Stixrude)
(b) Experimental Analysis of SiO—2 Atomic Networks
Chapter 4 Nuclear Magnetic Resonance as a Structural Probe of SiO—2 (by R. Dupree)
Chapter 5 Neutron and X–Ray Scattering Studies of Vitreous Silica (by A. C. Wright and R. N. Sinclair)
Part II Electronic Structure of the Si–O—2 Bond and the Extended Network
(a) Calculations and Modelling of the Electronic Structure
Chapter 6 Molecules as a Basis for Modeling the Force Field of Silica (by G. V. Gibbs, F. C. Hill, M. B. Boisen, Jr, and R . T. Downs)
Chapter 7 First Principles Calculation of the Electronic Structures of Crystalline and Amorphous Forms of SiO—2 (by W. Y. Ching)
Chapter 8 The Electronic Structure of Silica Using Ab Initio Pseudopotentials (by J. R. Chelikowsky and N. Binggeli)
(b) Experimental Analysis of the Electronic Structure
Chapter 9 X–Ray Absorption Near Edge Structures of SiO—2 (by F. Jollet)
Chapter 10 Electron Energy Loss Structures of SiO—2 (by M. Gautier–Soyer)
Part III Macroscopic and Point Defects
Chapter 11 Theory of Electronic and Structural Properties of Point Defects in SiO—2 (by A. H. Edwards, W. B. Fowler and J. Robertson)
Chapter 12 Radiation–Induced Defects and Electronic Modification (by P. Paillet, J. L. Leray and H. J. von Bardeleben)
Chapter 13 Transient Defects and Electronic Excitation (by N. Itoh, A. M. Stoneham and K. Tanimura)
Chapter 14 Radiation–Induced Defects and Structural Modifications (by E. Dooryhée, J.–P. Duraud and R. A. B. Devine)
Part IV Processing and Applications of Crystalline and Amorphous Phases
Chapter 15 Quartz Oscillators (by J. R. Vig)
Chapter 16 Science and Technology of Silica Lightguides for Telecommunications (by C. R. Kurkjian and D. M. Krol)
Chapter 17 Microstructure, Surface Chemistry, and Properties of Silica Gels (by C. J. Brinker, W. L. Warren and S. Wallace)
Index

Okładka tylna:
Structure and Imperfections in Amorphous and Crystalline Silicon Dioxide Edited by R. A. B. Devine, University of New Mexico, USA J.–P. Duraud, ESRF, Grenoble, France and E. Dooryhée, ESRF, Grenoble, France Silicon dioxide is one of the most common naturally occurring materials. Its applications range from nuclear waste storage to optical fibre communications to silicon microelectronics. Experts from America, Europe and Japan have written chapters covering both the amorphous and the crystalline phases of the mater ial with particular reference to its structure and defects. The book is divided into four sections: Topological Models for the Crystalline and Amorphous Phases Electronic Structure Macroscopic and Point Defects Processing and Applications of Crystalline and Amorphous Phases Engineers, researchers and postgraduate students of materials science, physics and engineering will all find this an extremely useful addition to their libraries.

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