Autor: James B. Kuo, Shih–Chia Lin
Wydawca: Wiley
Dostępność: 3-6 tygodni
Cena: 773,85 zł
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ISBN13: |
9780471417774 |
ISBN10: |
0471417777 |
Autor: |
James B. Kuo, Shih–Chia Lin |
Oprawa: |
Hardback |
Rok Wydania: |
2001-10-05 |
Ilość stron: |
424 |
Wymiary: |
241x170 |
Tematy: |
TJ |
A practical, comprehensive survey of SOI CMOS devices and circuits for microelectronics engineers
The microelectronics industry is becoming increasingly dependent on SOI CMOS VLSI devices and circuits. This book is the first to address this important topic with a practical focus on devices and circuits. It provides an up–to–date survey of the current knowledge regarding SOI device behaviors and describes state–of–the–art low–voltage CMOS VLSI analog and digital circuit techniques.
Low–Voltage SOI CMOS VLSI Devices and Circuits covers the entire field, from basic concepts to the most advanced ideas. Topics include:
∗ SOI device behavior: fundamental and floating body effects, hot carrier effects, sensitivity, reliability, self–heating, breakdown, ESD, dual–gate devices, accumulation–mode devices, short channel effects, and narrow channel effects
∗ Low–voltage SOI digital circuits: floating body effects, DRAM, SRAM, static logic, dynamic logic, gate array, CPU, frequency divider, and DSP
∗ Low–voltage SOI analog circuits: op amps, filters, ADC/DAC, sigma–delta modulators, RF circuits, VCO, mixers, low–noise amplifiers, and high–temperature circuits
With over 300 references to the state of the art and over 300 important figures on low–voltage SOI CMOS devices and circuits, this volume serves as an authoritative, reliable resource for engineers designing these circuits in high–tech industries.
Spis treści:
Preface.
Acknowlegments.
Introduction.
SOI CMOS Devices––Part I.
SOI CMOS Devices––Part II.
Fundamentals of SOI CMOS Circuits.
SOI CMOS Digital Circuits.
SOI CMOS Analog Circuits.
PD SOI–Technology SPICE Models.
Index.
Nota biograficzna:
JAMES B. KUO, PhD, is the NSERC Canada Research Chair Professor of Electrical and Computer Engineerin
g at the University of Waterloo in Ontario, Canada. He is a Fellow of IEEE and an associate editor of IEEE Circuits and Devices Magazine.
SHIH–CHIA LIN, PhD, is a researcher at the University of Waterloo.
Okładka tylna:
A practical, comprehensive survey of SOI CMOS devices and circuits for microelectronics engineers
The microelectronics industry is becoming increasingly dependent on SOI CMOS VLSI devices and circuits. This book is the first to address this important topic with a practical focus on devices and circuits. It provides an up–to–date survey of the current knowledge regarding SOI device behaviors and describes state–of–the–art low–voltage CMOS VLSI analog and digital circuit techniques.
Low–Voltage SOI CMOS VLSI Devices and Circuits covers the entire field, from basic concepts to the most advanced ideas. Topics include:
∗ SOI device behavior: fundamental and floating body effects, hot carrier effects, sensitivity, reliability, self–heating, breakdown, ESD, dual–gate devices, accumulation–mode devices, short channel effects, and narrow channel effects
∗ Low–voltage SOI digital circuits: floating body effects, DRAM, SRAM, static logic, dynamic logic, gate array, CPU, frequency divider, and DSP
∗ Low–voltage SOI analog circuits: op amps, filters, ADC/DAC, sigma–delta modulators, RF circuits, VCO, mixers, low–noise amplifiers, and high–temperature circuits
With over 300 references to the state of the art and over 300 important figures on low–voltage SOI CMOS devices and circuits, this volume serves as an authoritative, reliable resource for engineers designing these circuits in high–tech industries.
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