Devices for Integrated Circuits: Silicon and III–V Compound Semiconductors

A detailed introduction of the Si and III–V compound semiconductorsAs you read through this text, you’ll gain a thoroughunderstanding of the device physics of the Si and III–V compoundsemiconductors used in integrated circuits. The device physics ofpn junctions, bipolar transistors, Schottky barriers, MOScapacitors, and MOS field–effect transistors (MOSFETs) are alsodeveloped. And the physical understanding of the material isemphasized throughout, with important equations being derived frombasic physical concepts. Basic concepts from quantum andstatistical mechanics are used to describe electrons and holes insemiconductors. Carrier transport and recombination processes areexplained in detail and are applied to the description of the pnjunction. And the physics of the semiconductor devices are relatedto the parameters used in Spice, which are illustrated using PSpiceexamples and problems. Unique features of the text: The physics of semiconductor devices is related to theparameters used in Spice, and detailed instructions are included onPSpice. Circuit applications are given to illustrate the use of thedevices and to provide a foundation for subsequent topics inelectronic circuits. Includes coverage of topics such as the inversion layerthickness, drain current flow in field–effect transistors afterpinch off, and the subthreshold current in MOSFETs. Figures and examples based on realistic device parameters areused to illustrate important concepts.

∗ Integrated Circuit Family Tree
∗ Electrons in Solids
∗ Carrier Transport and Recombination
∗ p–n Junctions: I–V Behavior
∗ p–n Junctions: Reverse Breakdown and Junction Capacitance
∗ Schottky–Barrier Devices
∗ MOS Capacitors
∗ MOS Field–Effect Transistors
∗ Bipolar Transistors
Appendix I: Introduction to PSPICE