Handbook of Crystal Growth: Thin Films and Epitaxy

Volume IIIA Basic Techniques Handbook of Crystal Growth, 2nd Edition Volume IIIA (Basic Techniques), edited by chemical and biological engineering expert Thomas F. Kuech, presents the underpinning science and technology associated with epitaxial growth as well as highlighting many of the chief and burgeoning areas for epitaxial growth. Volume IIIA focuses on major growth techniques which are used both in the scientific investigation of crystal growth processes and commercial development of advanced epitaxial structures. Techniques based on vacuum deposition, vapor phase epitaxy, and liquid and solid phase epitaxy are presented along with new techniques for the development of three-dimensional nano-and micro-structures.

Volume IIIB Materials, Processes, and Technology Handbook of Crystal Growth, 2nd Edition Volume IIIB (Materials, Processes, and Technology), edited by chemical and biological engineering expert Thomas F. Kuech, describes both specific techniques for epitaxial growth as well as an array of materials-specific growth processes. The volume begins by presenting variations on epitaxial growth process where the kinetic processes are used to develop new types of materials at low temperatures. Optical and physical characterizations of epitaxial films are discussed for both in situ and exit to characterization of epitaxial materials. The remainder of the volume presents both the epitaxial growth processes associated with key technology materials as well as unique structures such as monolayer and two dimensional materials.

Volume IIIA Basic Techniques

Provides an introduction to the chief epitaxial growth processes and the underpinning scientific concepts used to understand and develop new processes.Presents new techniques and technologies for the development of three-dimensional structures such as quantum dots, nano-wires, rods and patterned growthIntroduces and utilizes basic concepts of thermodynamics, transport, and a wide cross-section of kinetic processes which form the atomic level text of growth process

Volume IIIB Materials, Processes, and Technology

Describes atomic level epitaxial deposition and other low temperature growth techniquesPresents both the development of thermal and lattice mismatched streams as the techniques used to characterize the structural properties of these materialsPresents in-depth discussion of the epitaxial growth techniques associated with silicone silicone-based materials, compound semiconductors, semiconducting nitrides, and refractory materials

Volume 3A

Chapter 1: Epitaxy for Energy applications Chapter 2: Hydride Vapor Phase Epitaxy Chapter 3: The principles and practice of organometallic vapor phase epitaxy Chapter 4: Principles of molecular beam epitaxy (Si or IIIV) Chapter 5: Molecular beam epitaxy with gaseous source Chapter 6: Liquid phase epitaxy Chapter 7: Solid phase epitaxy Chapter 8: Pulsed laser deposition Chapter 9: Nanowire growth (VLS or VSS) Chpater 10: Selective area masked growth (nano-to-micro) Chpater 11: Templated growth and van der walls epitaxy graphoepitaxy Chapter 12: Epitaxial small  organic molecules Chapter 13: Oxide thin films Chapter 14: Epitaxy of carbon-based materials: diamond thinfilm Chapter 15: Magnetic Semiconductors Chapter 16: MOVPE of Nitrides (LEO) Chapter 17: MBE of nitrides Chapter 18: Graphene Chapter 19: Chemical Vapor Deposition of Two-Dimensional Crystals

Volume 3B

Chapter 1: Kinetic processes in vapour phase epitaxy Chapter 2: Organometallic vapor phase epitaxy reaction chemical kinetics Chapter 3: Transport  phenomena in vapor phase epitaxy reactors Chapter 4: Nucleation and  surface diffusion in molecular beam epitaxy Chapter 5: Film stress and  mechanics in thin film epitaxy Chapter 6: Low  Temperature and Metamorphic buffer layers Chapter 7: Self-assembly in Epitaxial growth Chapter 8: "Atomic layer or  Modulated Epitaxial Growth Techniques" Chapter 9: Epitaxial Growth of SiC Chapter 10: In situ optical  studies of epitaxial growth Chapter 11: X-ray and  electron diffraction Chapter 12: Growth of III-V’s on Silicon:nitrides and arsenides Chapter 13: Si and Si-based alloy epitaxy