III-Nitride Electronic Devices

III-Nitride Electronic Devices, Volume 102, emphasizes two major technical areas advanced by this technology: radio frequency (RF) and power electronics applications. The range of topics covered by this book provides a basic understanding of materials, devices, circuits and applications while showing the future directions of this technology. Specific chapters cover Electronic properties of III-nitride materials and basics of III-nitride HEMT, Epitaxial growth of III-nitride electronic devices, III-nitride microwave power transistors, III-nitride millimeter wave transistors, III-nitride lateral transistor power switch, III-nitride vertical devices, Physics-Based Modeling, Thermal management in III-nitride HEMT, RF/Microwave applications of III-nitride transistor/wireless power transfer, and more.

Presents a complete review of III-Nitride electronic devices, from fundamental physics, to applications in two key technical areas – RF and power electronicsOutlines fundamentals, reviews state-of-the-art circuits and applications, and introduces current and emerging technologiesWritten by a panel of academic and industry experts in each field

1. Electronic properties of III-nitride materials and basics of III-nitride FETs Peter M. Asbeck 2. Epitaxial growth of III-nitride electronic devices Yu Cao 3. III-Nitride microwave power transistors Jeong-Sun Moon 4. III-Nitride millimeter wave transistors Keisuke Shinohara 5. III-Nitride lateral transistor power switch Sang-Woo Han and Rongming Chu 6. III-Nitride vertical devices Tohru Oka 7. Physics-based III-Nitride device modeling Ujwal Radhakrishna 8. Power electronics applications of III-nitride transistors Yifeng Wu 9. N-polar III-nitride transistors M.H. Wong and U.K. Mishra 10. III-Nitride ultra-wide-bandgap electronic devices Robert J. Kaplar, Andrew A. Allerman, Andrew M. Armstrong, Albert G. Baca, Mary H. Crawford, Jeramy R. Dickerson, Erica A. Douglas, Arthur J. Fischer, Brianna A. Klein and Shahed Reza 11. III-Nitride p-channel transistors Akira Nakajima 12. Emerging materials, processing and device concepts David J. Meyer, D. Scott Katzer, Matthew T. Hardy, Neeraj Nepal and Brian P. Downey 13. Epitaxial lift-off for III-nitride devices Chris Youtsey, Robert McCarthy and Patrick Fay