Hot-Carrier Effects in MOS Devices

The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications. They are rapidly movingout of the research lab and into the real world.

This book is derived from Dr. Takedas book in Japanese, Hot-Carrier Effects, (published in 1987 by Nikkei Business Publishers). However, the new book is much more than a translation. Takedas original work was a starting point for developing this much more complete and fundamental text on this increasingly important topic. The new work encompasses not only all the latest research and discoveries made in the fast-paced area of hot carriers, but also includes the basics of MOS devices, and the practical considerations related to hot carriers.

Chapter one itself is a comprehensive review of MOS device physics which allows a reader with little background in MOS devices to pick up a sufficient amount of information to be able to follow the rest of the bookThe book is written to allow the reader to learn about MOS Device Reliability in a relatively short amount of time, making the texts detailed treatment of hot-carrier effects especially useful and instructive to both researchers and others with varyingamounts of experience in the fieldThe logical organization of the book begins by discussing known principles, then progresses to empirical information and, finally, to practical solutionsProvides the most complete review of device degradation mechanisms as well as drain engineering methodsContains the most extensive reference list on the subject

MOS Device Fundamentals
Hot-Carrier Injection Mechanisms
Hot-Carrier Device Degradation
AC and Process-Induced Hot-Carrier Effects
Hot-Carrier Effects at Low Temperature and Low Voltage
Dependence of Hot-Carrier Phenomena on Device Structure
As-P Double Diffused Drain (DDD) Versus Lightly Doped Drain (LDD) Devices
Gate-to-Drain Overlatpped Devices (GOLD)