Autor: Kerherve, EricBelot, Didier
Wydawca: Elsevier
Dostępność: 3-6 tygodni
Cena: 286,65 zł
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ISBN13: |
9780124186781 |
ISBN10: |
0124186785 |
Autor: |
Kerherve, EricBelot, Didier |
Oprawa: |
Paperback |
Rok Wydania: |
2015-01-07 |
Tematy: |
TJFD |
This book provides an overview of current efficiency enhancement and linearization techniques for silicon power amplifier designs. It examines the latest state of the art technologies and design techniques to address challenges for RF cellular mobile, base stations, and RF and mmW WLAN applications. Coverage includes material on current silicon (CMOS, SiGe) RF and mmW power amplifier designs, focusing on advantages and disadvantages compared with traditional GaAs implementations.
With this book you will learn:
The principles of linearization and efficiency improvement techniquesThe architectures allowing the optimum design of multimode Si RF and mmW power amplifiersHow to make designs more efficient by employing new design techniques such as linearization and efficiency improvementLayout considerationsExamples of schematic, layout, simulation and measurement results
Addresses the problems of high power generation, faithful construction of non-constant envelope constellations, and efficient and well control power radiation from integrated silicon chipsDemonstrates how silicon technology can solve problems and trade-offs of power amplifier design, including price, size, complexity and efficiencyWritten and edited by the top contributors to the field
Chapter 1: Holistic Approaches for Power Generation, Linearization, and Radiation in CMOS, A. Hajimiri Chapter 2: Cartesian Feedback with digital enhancement for CMOS RF transmitter, Nathalie Deltimple Chapter 3: Transmitter Linearity and Energy Efficiency, Earl. Mc Cune Chapter 4: mmW Doherty, F. Ghannouchi Chapter 5: Reliable Power Amplifier, B. Martineau Chapter 6: Efficiency Enhancement for THz Power Amplifier, U. Pfeiffer
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