Autor: Hu, ChenmingKhandelwal, SourabhChauhan, Yogesh SinghMckay, ThomasWatts, JosefDuarte, Juan PabloKushw
Wydawca: Elsevier
Dostępność: 3-6 tygodni
Cena: 848,40 zł
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ISBN13: |
9780081024010 |
Autor: |
Hu, ChenmingKhandelwal, SourabhChauhan, Yogesh SinghMckay, ThomasWatts, JosefDuarte, Juan PabloKushw |
Oprawa: |
Paperback |
Rok Wydania: |
2019-05-22 |
Tematy: |
TJFD |
Industry Standard FDSOI Compact Model BSIM-IMG for IC Design helps readers develop an understanding of a FDSOI device and its simulation model. It covers the physics and operation of the FDSOI device, explaining not only how FDSOI enables further scaling, but also how it offers unique possibilities in circuits. Following chapters cover the industry standard compact model BSIM-IMG for FDSOI devices. The book addresses core surface-potential calculations and the plethora of real devices and potential effects. Written by the original developers of the industrial standard model, this book is an excellent reference for the new BSIM-IMG compact model for emerging FDSOI technology.
The authors include chapters on step-by-step parameters extraction procedure for BSIM-IMG model and rigorous industry grade tests that the BSIM-IMG model has undergone. There is also a chapter on analog and RF circuit design in FDSOI technology using the BSIM-IMG model.
1. Fully Depleted Silicon on Oxide Transistor and Compact Model
2. Core Model for Independent Multigate MOSFETs
3. Channel Current Model With Real Device Effects in BSIM-IMG
4. Leakage Current and Thermal Effects
5. Model for Terminal Charges and Capacitances in BSIM-IMG
6. Parameter Extraction With BSIM-IMG Compact Model
7. Testing BSIM-IMG Model Quality
8. High-Frequency and Noise Models in BSIM-IMG
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