Defects in Advanced Electronic Materials and Novel Low Dimensional Structures

Defects in Advanced Electronic Materials and Novel Low Dimensional Structures provides a comprehensive review on the recent progress in solving defect issues and deliberate defect engineering in novel material systems. It begins with an overview of point defects in ZnO and group-III nitrides, including irradiation-induced defects, and then look at defects in one and two-dimensional materials, including carbon nanotubes and graphene. Next, it examines the ways that defects can expand the potential applications of semiconductors, such as energy upconversion and quantum processing. The book concludes with a look at the latest advances in theory.

While defect physics is extensively reviewed for conventional bulk semiconductors, the same is far from being true for novel material systems, such as low-dimensional 1D and 0D nanostructures and 2D monolayers. This book fills that necessary gap.

Presents an in-depth overview of both conventional bulk semiconductors and low-dimensional, novel material systems, such as 1D structures and 2D monolayersAddresses a range of defects in a variety of systems, providing a comparative approachIncludes sections on advances in theory that provide insights on where this body of research might lead

1. Point defects in ZnO Matthew D. McCluskey 2. Point defects in group III nitrides Bo Anders Monemar and Plamen P. Paskov 3. Defects in 1D-Nanowires Jan Stehr 4. Defects in carbon nanotubes Ali Ghavamian, Maksym Rybachuk and Andreas Öchsner 5. Defects in graphene Litao Sun and Tao Xu 6. Defects in 2D-materials Wu Zhou and Junhao Lin 7. Energy upconversion promoted by defects Irina Buyanova 8. Defects for quantum information processing in SiC Georgy Astakhov and Vladimir Dyakonov 9. Defects for quantum information processing in Si Eisuke Abe and Kohei Itoh 10. Room temperature defect engineered spintronics in dilute nitrides Weimin M. Chen