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Nitride Semiconductor Light-Emitting Diodes (LEDs): Materials, Technologies, and Applications - ISBN 9780081019429

Nitride Semiconductor Light-Emitting Diodes (LEDs): Materials, Technologies, and Applications

ISBN 9780081019429

Autor: Huang, Jian-JangKuo, Hao-ChungShen, Shyh-Chiang

Wydawca: Elsevier

Dostępność: 3-6 tygodni

Cena: 1 486,80 zł

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ISBN13:      

9780081019429

Autor:      

Huang, Jian-JangKuo, Hao-ChungShen, Shyh-Chiang

Oprawa:      

Paperback

Rok Wydania:      

2017-10-24

Tematy:      

TGM

Nitride Semiconductor Light-Emitting Diodes (LEDs): Materials, Technologies, and Applications, Second Edition reviews the fabrication, performance and applications of the technology, encompassing the state-of-the-art material and device development, along with considerations regarding nitride-based LED design. This updated edition is based on the latest research and advances, including two new chapters on LEDs for large displays and laser lighting. Chapters cover molecular beam epitaxy (MBE) growth of nitride semiconductors, modern metalorganic chemical vapor deposition (MOCVD) techniques, the growth of nitride-based materials, and gallium nitride (GaN)-on-sapphire and GaN-on-silicon technologies for LEDs. Nanostructured, non-polar and semi-polar nitride-based LEDs, as well as phosphor-coated nitride LEDs, are also discussed.

The book also addresses the performance of nitride LEDs, including photonic crystal LEDs, surface plasmon enhanced LEDs, color tuneable LEDs, and LEDs based on quantum wells and quantum dots. Further chapters discuss the development of LED encapsulation technology and fundamental efficiency droop issues in gallium indium nitride (GaInN) LEDs.

It is a technical resource for academics, physicists, materials scientists, electrical engineers, and those working in the lighting, consumer electronics, automotive, aviation, and communications sectors.



Features new chapters on laser lighting, addressing the latest advances on this topicReviews fabrication, performance, and applications of this technology that encompass the state-of-the-art material and device developmentCovers the performance of nitride LEDs, including photonic crystal LEDs, surface plasmon enhanced LEDs, color tuneable LEDs, and LEDs based on quantum wells and quantum dotsHighlights applications of nitride LEDs, including liquid crystal display (LCD) backlighting, infra-red emitters, and automotive lightingProvides a comprehensive discussion of gallium nitride on both silicon and sapphire substrates

Part One Materials and fabrication 1. Molecular beam epitaxy (MBE) growth of nitride semiconductors 2. MOCVD growth of nitride semiconductors 3. GaN on sapphire substrates for visible light-emitting diodes 4. Gallium nitride (GaN) on silicon substrates for LEDs 5. Phosphors for white LEDs 6. Recent development of fabrication technologies of nitride LEDs for performance improvement 7. Nanostructured LED 8. Nonpolar and semipolar LEDs

Part Two Performance of nitride LEDs 9. Efficiency droop in GaInN/GaN LEDs 10. Photonic crystal nitride LEDs 11. Nitride LEDs based on quantum wells and quantum dots 12. Colour tuneable LEDs and pixelated micro-LED arrays 13. Reliability of nitride LEDs 14. Physical mechanisms limiting the performance and the reliability of GaN-based LEDs 15. Chip packaging: encapsulation of nitride LEDs

Part Three Applications of nitride LEDs 16. White LEDs for lighting applications 17. Ultraviolet LEDs 18. Infrared emitters using III-nitride semiconductors 19. LEDs for liquid crystal display (LCD) backlighting 20. LEDs and automotive lighting applications 21. LEDs for large displays 22. LEDs for projectors

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