Materials and Processes for Submicron Technologies

The European Materials Society decided to hold a Symposium entitled Materials and Processes for Submicron Technologies in June 16-19, 1998, within the yearly E-MRS Spring Meeting in Strasbourg, France.
The purpose of this meeting was to discuss the results of the advances in microelectronic devices directly relating to the reduction in size of features of the devices down to submicron size. When electronic materials are patterned to these small sizes, their physico-chemical properties show many aspects (interdiffusion, electromigration, etc.), many of these not well known yet. The articles presented in this volume, 28 in number, are representative of the 40 papers accepted for this particular E-MRS Meeting (Symposium N).

Selected papers: Interconnect technology trend for microelectronics (R.Liu et al.). Study of C contamination during copper integration for subquarter micron technology (P. Motte et al.). Cobalt silicide thermal stability: from blanket thin film to submicrometer lines (A. Alberti et al.). TEM studies of the microstructure evolution in plasma treated CVD TiN thin films used as diffusion barriers (S. Ikeda et al.). Sputtered tungsten films on polyimide, an application for X-ray masks (J. Ligot et al.). Nanometer scale lithography on silicon, titanium and PMMA resist using scanning probe microscopy (E. Dubois, J.-L. Bubbendorff). Oxidation of rf plasma: hydrogenated crystalline Si (S. Alexandrova et al.). Determination of the spectral behaviour of porous silicon based photodiodes (R.J. Martín-Palma et al.).