Autor: Chauhan, Yogesh SinghLu, DarsenVenugopalan, SriramkumarKhandelwal, SourabhDuarte, Juan PabloPaydavos
Wydawca: Elsevier
Dostępność: 3-6 tygodni
Cena: 371,70 zł
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ISBN13: |
9780124200319 |
ISBN10: |
0124200311 |
Autor: |
Chauhan, Yogesh SinghLu, DarsenVenugopalan, SriramkumarKhandelwal, SourabhDuarte, Juan PabloPaydavos |
Oprawa: |
Hardback |
Rok Wydania: |
2015-02-20 |
Tematy: |
TJFC |
This book is the first to explain FinFET modeling for IC simulation and the industry standard – BSIM-CMG - describing the rush in demand for advancing the technology from planar to 3D architecture, as now enabled by the approved industry standard.
The book gives a strong foundation on the physics and operation of FinFET, details aspects of the BSIM-CMG model such as surface potential, charge and current calculations, and includes a dedicated chapter on parameter extraction procedures, providing a step-by-step approach for the efficient extraction of model parameters.
With this book you will learn:
Why you should use FinFETThe physics and operation of FinFETDetails of the FinFET standard model (BSIM-CMG)Parameter extraction in BSIM-CMGFinFET circuit design and simulation
Authored by the lead inventor and developer of FinFET, and developers of the BSIM-CM standard model, providing an experts’ insight into the specifications of the standardThe first book on the industry-standard FinFET model - BSIM-CMG
1. FinFET- from Device Concept to Standard Compact Model 2. Analog/RF behavior of FinFET 3. Core Model for FinFETs 4. Channel Current and Real Device Effects 5. Leakage Current Models 6. Charge, Capacitance and Nonquasi-Static Effect 7. Parasitic Resistances and Capacitances 8. Noise 9. Junction Diode Current and Capacitance 10. Benchmark Tests for Compact Models 11. BSIM-CMG Model Parameter Extraction 12. Temperature Effects
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